carrier mobility การใช้
- The most important parameter of OFET carrier transport is carrier mobility.
- The minority carrier diffusion constant is directly proportional to carrier mobility.
- Carrier mobility is most commonly measured using the Hall effect.
- Measured carrier mobilities for electrons and holes are shown in Figure 4.
- The carrier mobilities are much smaller than that of silicon.
- Thus lattice scattering lowers the carrier mobility more and more at higher temperature.
- HEMTs'exceptional carrier mobility and switching speed come from the following conditions.
- Even with extreme deformation, excellent carrier mobility in monolayer graphene can be preserved.
- Another important characteristic of these gels is that they maintain high charge carrier mobility.
- Measured charge carrier mobility exceeded / Vs.
- However, the extra impurities would reduce the carrier mobility so the resistivity would increase.
- Rubrene-based OFETs show the highest carrier mobility 20 40 cm 2 / ( V穝 ).
- These include the diffusion rate of dopant elements, carrier mobilities and the thermal production of charge carriers.
- Even for dopant concentrations in excess of 10 12 cm " 2 carrier mobility exhibits no observable change.
- The term "'carrier mobility "'refers in general to both electron and hole mobility in semiconductors.
- Alternatively, if the carrier mobility is known, the diffusion coefficient may be determined from the Einstein relation on electrical mobility.
- In practical terms, a low effective mass leads directly to high carrier mobility, favoring higher speed of transport and current carrying capacity.
- Regarding perovskite materials, charge carrier mobility as high as 10 cm 2 V " 1 s " 1 has been observed.
- Upon transitioning to the Cmcm structure, SnSe maintains its low thermal conductivity but exhibits higher carrier mobilities, leading to its excellent ZT value.
- Rubrene holds the distinction of being the organic semiconductor with the highest carrier mobility, reaching 40 cm 2 / ( V穝 ) for holes.
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